Red-Emitting Semiconductor Quantum Dot Lasers

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DOIResolve DOI: http://doi.org/10.1126/science.274.5291.1350
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TypeArticle
Journal titleScience
Volume274
Issue5291
Pages13501353; # of pages: 4
AbstractVisible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at sim 707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of sim 8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338451
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Record identifier005caa69-3321-4130-af40-77529a006425
Record created2009-09-10
Record modified2016-05-09
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