High-Frequency Quantum-Well Infrared Photodetectors Measured by Microwave-Rectification Technique.

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DOIResolve DOI: http://doi.org/10.1109/3.502380
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TypeArticle
Journal titleIEEE Journal of Quantum Electronics
ISSN0018-9197
Volume32
Issue6
Pages10241028; # of pages: 5
Subject234 to 466 A; 30 GHz; 5 to 6 ps; barrier thicknesses; frequency response; high-biasing field regime; high-frequency capability; high-frequency quantum-well infrared photodetectors; infrared detectors; intrinsic photoconductive lifetime; microwave measurement; microwave-rectification technique; packaged detectors; photoconducting devices; photodetectors; quantum-well infrared photodetectors; rectification; semiconductor quantum wells
AbstractWe explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10292731
NPARC number12328348
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Record identifier0103c132-1df2-4f93-9e1c-9ba675033316
Record created2009-09-10
Record modified2016-05-09
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