Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Download
  1. Get@NRC: Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/S0022-0248(02)01842-0
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Crystal Growth
Volume248
Pages568572; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744460
Export citationExport as RIS
Report a correctionReport a correction
Record identifier0138e1f1-8dce-4bb5-a9d6-f5b8c550a66b
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)