Free-carrier absorption in Be-and C-doped GaAs epilayers and far infrared detector applications

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DOIResolve DOI: http://doi.org/10.1063/1.1347002
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TypeArticle
Journal titleJournal of Applied Physics
Volume89
Issue6
Pages32953300; # of pages: 6
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744054
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Record identifier0161f02e-d6ff-47c5-8126-f64df846b032
Record created2009-10-27
Record modified2016-05-09
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