Mid-wavelength infrared detection with InxGa1-xAs/Al0.45Ga0.55As multiple quantum well structures

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/10/1/007
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TypeArticle
Journal titleSemiconductor Science and Technology
ISSN0268-1242
Volume10
Issue1
Pages4548; # of pages: 4
AbstractWe demonstrate the detection of mid-wavelength (3-5 mu m) infrared radiation by intersubband transitions in InxGa1-xAs/Al0.45Ga0.55As multiple quantum well structures grown on GaAs substrates. The peak detector response is shifted from 4.8 to 4.3 mu m by increasing the indium fraction from x=0.05 to x=0.20, while simultaneously decreasing the well width to keep the first excited eigenstate near the top of the wells. These detectors can be combined in detector stacks with conventional long-wavelength (8-12 mu m) infrared quantum well detectors for multi-band imaging applications.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10401556
NPARC number12327336
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Record identifier01ec7b99-c94b-4b93-befd-860db5622e97
Record created2009-09-10
Record modified2016-05-09
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