Growth and characterization of high mobility two-dimensional electron gases

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DOIResolve DOI: http://doi.org/10.1116/1.588922
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TypeArticle
Journal titleJournal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
ISSN10711023
Volume14
Issue3
Pages22902292; # of pages: 3
SubjectHeterostructures; Quantum Hall Effect; Temperature Range 0−13 K; Electron Gas; Aluminium Arsenides; Gallium Arsenides; Molecular Beam Epitaxy; Shubnikov−De Haas Effect; Carrier Mobility; Molecular; atomic; ion; chemical beam epitaxy; III-V semiconductors; Charge carriers: generation; recombination; lifetime; trapping; mean free paths
AbstractGaAs/GaAlAs based two-dimensional electron gas structures, with peak mobilities up to 6.4 million (cm2/V s), have been grown in a V80H molecular beam epitaxy system. Unlike many systems in which layers with ultra-high mobilities have been grown, this is a general purpose machine with 3 inch wafer capability and is used extensively for a variety of other growth projects. Some of the procedures taken to achieve these high mobilities are presented and some of the special considerations involved in transport characterization are discussed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12330809
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Record identifier02070644-bf9e-48ca-b310-3a10404ed030
Record created2009-09-10
Record modified2016-05-09
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