Tunable negative differential resistance controlled by spin blockade in single-electron transistors

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DOIResolve DOI: http://doi.org/10.1063/1.1459489
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TypeArticle
Journal titleApplied Physics Letters
Volume80
Issue12
Pages2177
AbstractThe single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744640
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Record identifier027fc2f7-0499-4f1e-aa37-b0f146e8436a
Record created2009-10-27
Record modified2016-05-09
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