Phonons in strained In1-xGaxAs/InP epilayers

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DOIResolve DOI: http://doi.org/10.1063/1.1324698
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TypeArticle
Journal titleJournal of Applied Physics
Volume88
Issue11
Pages6423
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744032
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Record identifier02ea53ab-5a87-4e66-83e2-c28b7dbdb18a
Record created2009-10-27
Record modified2016-05-09
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