Current distributions in silicon-germanium p-MOSFETs

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DOIResolve DOI: http://doi.org/10.1139/p96-854
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TypeArticle
Journal titleCanadian Journal of Physics (Supplement)
Volume74
Issue12
Pagess177s181; # of pages: 5
AbstractSimulations of the current distributions in Si–Ge p–MOSFETs are presented for Si–Ge channel designs that have a triangular or a uniform Ge profile. The distributions of current show why the triangular design is better than the uniform Ge profile. Contributions to the transconductance in both designs are dominated by the Si–Ge channel in the −0.5 to −1.5 V gate-voltage range but the contribution to the device performance from the current parallel to the top oxide/Si interface dominates the response by −2.5 V.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328313
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Record identifier02eccaba-e17f-4509-accd-d5d80c628c7d
Record created2009-09-10
Record modified2016-05-09
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