GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments

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DOIResolve DOI: http://doi.org/10.1016/0038-1101(95)00190-5
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TypeArticle
Journal titleSolid-State Electronics
Volume39
Issue4
Pages507510; # of pages: 4
AbstractWe report on a new Se chemical passivation [(NH4)2S + Se] for GaAs surfaces. We compare our Se passivated surfaces with (NH4)2S + S [(NH4)2Sx] passivated surfaces by preparing Al-nGaAs Schottky diodes and submitting them to cumulative annealing treatments. We find that with or without an annealing treatment the Schottky barriers are consistently closer to the ideal value (0.2 eV) when the GaAs surfaces are treated with the (NH4)2S + Se rather than the (NH4)2Sx chemical solution. This indicates that (NH4)2S + Se surface passivation is more effective in reducing the surface state density and in unpinning the Fermi level than the (NH4)2Sx passivation treatment. These results are attributed to the complementary passivation role of the S and the Se on the GaAs surface. Also, the annealing treatment plays an important role in the control of the barrier height in both kinds of passivation.
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NPARC number12338682
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Record identifier030ffcea-b5bb-4fa3-a86b-16bfe9e3a50a
Record created2009-09-10
Record modified2016-05-09
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