Progress and Challenges in Growth of High-Mobility GaN Epilayers and AlGaN/GaN HFET Strcutures by Ammonia- MBE Technique

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TypeArticle
Journal titleTrends in Physics
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12337896
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Record identifier0310d636-bc3f-4fe1-867e-5b3ed5869315
Record created2009-09-10
Record modified2016-05-09
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