Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (0 0 1) using an Ar/N2 RF plasma

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DOIResolve DOI: http://doi.org/10.1016/S0022-0248(02)01422-7
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TypeArticle
Journal titleJournal of Crystal Growth
Volume242
Issue1-2
Pages141164; # of pages: 24
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; National Institute for Nanotechnology
Peer reviewedNo
NPARC number12743807
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Record identifier03422d5e-d054-47c2-93d2-193bb1de4fc4
Record created2009-10-27
Record modified2016-05-09
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