On hot-carrier induced degradation, temperature, bias and emitter geometry dependence of the dc characteristics of polysilicon-emitter bipolar transistors

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
ConferenceEDMO2002 - 10th International Symposium on Electron Devices for Microwave & Optoelectronic Alications, November 2002, Manchester, UK
Volume
Pages8994; # of pages: 6
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346431
Export citationExport as RIS
Report a correctionReport a correction
Record identifier03b4aa1c-9eef-4240-92f7-1ada6b02eccd
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)