Device level characterization for energy bandgap of strain-relaxed SiGe and Oxide/SiGe barrier height

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DOIResolve DOI: http://doi.org/10.1149/1.1705663
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TypeArticle
Journal titleJournal of the Electrochemical Society
Volume151
Issue6
PagesG377G379
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744652
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Record identifier03cf058c-be6e-4083-bf4a-455a1e3edfd1
Record created2009-10-27
Record modified2016-05-09
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