Formation of organic monolayers on silicon via gas-phase photochemical reactions

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DOIResolve DOI: http://doi.org/10.1021/la052960a
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TypeArticle
Journal titleLangmuir
ISSN0743-7463
Volume22
Issue7
Pages31803185; # of pages: 6
AbstractA new method for the formation of molecular monolayers on silicon surfaces utilizing gas-phase photochemical reactions is reported. Hydrogen-terminated Si(111) surfaces were exposed to various gas-phase molecules (hexene, benzaldehyde, and allylamine) and irradiated with ultraviolet light from a mercury lamp. The surfaces were studied with in situ Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and scanning tunneling microscopy. The generation of gas-phase radicals was found to be the initiator for organic monolayer formation via the abstraction of hydrogen from the H/Si(111) surface. Monolayer growth can occur through either a radical chain reaction mechanism or through direct radical attachment to the silicon dangling bonds.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
Identifier10367391
NPARC number12339045
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Record identifier03d0e96c-4b53-42d9-bd5f-ba578b3b7b70
Record created2009-09-11
Record modified2016-05-09
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