Si Nanocrystal Memory Devices Self-Assembled by In Situ Rapid Thermal Annealing of Ultrathin a-Si on SiO2

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DOIResolve DOI: http://doi.org/10.1149/1.2764459
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TypeArticle
Journal titleElectrochemical and Solid-State Letters
Volume10
Issue10
PagesH302H304
AbstractSi-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9–3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850°C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 X 1011 cm−2, and a stored charge density of 4.1 X 1012 cm−2 (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23–32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744828
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Record identifier03f66d8e-d8a9-4e01-9485-a0ccf3b7e852
Record created2009-10-27
Record modified2016-05-09
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