InAs self-assembled quantum dots on InP by molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.116122
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TypeArticle
Journal titleApplied Physics Letters
Volume68
Issue7
Pages991993; # of pages: 3
SubjectIndium Arsenides; Indium Phosphides; Molecular beam epitaxy; Photoluminescence; Quantum dots; TEM
AbstractWe present results of room temperature photoluminescence (PL) emission from a 0-dimensional system in the ~ 1.4 to ~ 1.7 µm spectral region. Molecular beam epitaxy was used to grow InAs self-assembled quantum dots in AlInAs on an InP substrate. Preliminary characterizations have been performed using PL and transmission electron microscopy. The low temperatures PL spectra also display excited state emission and state filling as the excitation intensity is increased.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12331571
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Record identifier0405e664-6eb8-48ee-ae6a-85339b39d01b
Record created2009-09-10
Record modified2016-05-09
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