Dopant delineation on Si(100) using anodic oxidation and atomic force microscopy

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DOIResolve DOI: http://doi.org/10.1063/1.116342
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TypeArticle
Journal titleApplied Physics Letters
Volume68
Issue20
Pages28402842; # of pages: 3
Subjectanodization; atomic force microscopy; crystal doping; electrochemistry; etching; microstructure; oxidation; silicon; surface structure
AbstractA procedure has been developed for delineation of lateral variations in the doping of Si(100). The procedure relies on the fact that the thickness of electrochemically grown oxide depends on the dopant density and type. By growing the oxide and then etching it off in cycles, the silicon is selectively removed according to the doping density. By using atomic force microscopy, the electrically effective n + , n, and p-type regions of the sample are delineated.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338162
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Record identifier042cac2e-faff-489c-8a57-a2a790088ee4
Record created2009-09-10
Record modified2016-05-09
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