Nanopillar ITO electrodes via argon plasma etching

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Journal titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Article number40606
SubjectAr plasmas; Argon plasma etching; Columnar morphology; Electrical conductivity; Forming gas; Indium tin oxide; ITO electrodes; ITO films; Nanopillars; Organic solar cell; Vertically aligned; Electric conductivity; Opacity; Tin oxides; Nanostructures
AbstractThe authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma, the conditions of which determine the size, spacing, and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillar films. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.
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AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21270231
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Record identifier044355a0-50c8-4472-bf80-c41c68a75713
Record created2014-01-14
Record modified2016-05-09
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