Annealing effects on the chemical configuration of uncapped and (poly-Si)-capped HfOxNy film deposited on Si(001)

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DOIResolve DOI: http://doi.org/10.1149/1.1939087
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TypeArticle
Journal titleJournal of the Electrochemical Society
Volume152
Issue8
PagesF101F106
Subjecthafnium compounds; silicon compounds; transmission electron microscopy; thermal stability
AbstractWe use spatially resolved spectroscopy in a scanning transmission electron microscope to study the thermal stability of the HfOxNy/Si(001) system with and without an in situ capping layer of silicon. The films were deposited by metallorganic chemical vapor deposition using the amide precursor tetrakis(diethylamido)hafnium with NO as the oxidant. A SiOxNy interfacial layer (∼1.8nm) is observed at the HfOxNy/substrate interface for films directly exposed to air. In addition, the N loss in the HfOxNy film for the uncapped sample is significant. In contrast, in situ capping is found to reduce the thickness of the interfacial layer and to keep the N content in the final dielectric film high. The capped HfOxNy films are quasi-amorphous, whereas uncapped films are polycrystalline following exposure to air. Oxinitridation at both interfaces is observed following a rapid thermal annealing process (900°C in N2 for 30s ) of the capped HfOxNy film. However, the interfacial layers remain thin (∼1nm) and a significant amount of N is present in the HfOxNy film. The rapid thermal annealing leads to the partial crystallization of the HfOxNy film and the Si capping layer. No Hf silicate is detected on a scale of ∼6Å in the electron energy loss spectroscopy analysis.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744780
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Record identifier049edb26-8881-4602-9212-cab32a256223
Record created2009-10-27
Record modified2016-05-09
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