Photoluminescence study of laser ablated gallium nitride thin films

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DOIResolve DOI: http://doi.org/10.1117/12.470609
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TypeArticle
Proceedings titleProceedings of the SPIE
ConferencePhoton Processing in Microelectronics and Photonics, January 21, 2002, San Jose, California, USA
ISSN0277786X
Volume4637
Pages8289; # of pages: 8
AbstractPhotoluminescence analysis has been implemented to investigate the crystalline properties of Gallium Nitride layers ablated with an XeCl excimer laser. The measurements were carried out on craters up to 1 ?m deep, which corresponded to almost half the thickness of the deposited film. The craters were etched in an air environment with laser fluences in the range of 99-231 mJ/cm2. In the 350-1200 nm spectral range, the near-band-edge emission, and the donor-acceptor pair recombination were identified. All spectra were dominated by the excitonic recombination. The analysis revealed that during the ablation, the full width at half maximum of the donor-bound luminescence line remained almost independent of both the depth of the crater and of the laser fluence. Also, the donor-acceptor pair recombination, which manifests its presence through a weak yellow luminescence observed in the vicinity of the 600 nm wavelength, has been consistently observed in the spectra. A relative decrease in the excitonic emission indicated that a thin layer of altered material with lower crystalline quality was formed at the surface of the ablated material.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedNo
Identifier10361236
NPARC number12339301
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Record identifier04abc3db-7c05-4cde-af2a-9662103ce645
Record created2009-09-11
Record modified2016-05-09
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