Tunable emission from InAs quantum dots on InP nanotemplates

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DOIResolve DOI: http://doi.org/10.1116/1.1500747
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TypeArticle
Journal titleJournal of Vacuum Science & Technology B
Volume20
Issue5
Pages21732176; # of pages: 4
AbstractSelective area chemical beam epitaxy is used to fabricate submicron [100]-oriented InP ridges with well-defined, defect-free (011) sidefacets and (001) tops. Following the deposition of two monolayers of InAs on such nanotemplates and subsequent capping with InP, photoluminescence spectra show for wider ridges strong emission from a thin InAs quantum well and, as the ridge width is reduced, a gradual appearance of a quantum dot emission at lower energy. The method allows continuous tuning on a given sample in a single growth run of both the quantum dot density and the emission wavelength. The result is a consequence of adatom diffusion from the ridge sidefacets onto the top (001) facet, which increases the amount of InAs beyond the critical thickness for three-dimensional nucleation to occur. Compared with growth on planar InP(001) substrates, InAs self-assembled quantum dots grown on these nanotemplates are more uniform as revealed by a twofold reduction in emission linewidth at 4 K.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744526
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Record identifier04c4a9fe-3f1b-4420-a653-a721d589df33
Record created2009-10-27
Record modified2016-05-09
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