Field Emission Properties of Lanthanum Sulfide Thin Films Deposited on Si and InP Substrates by Pulsed Laser Deposition

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EditorSearch for: Hug, S.; Search for: Wilshaw, P.
Proceedings titleTechnical Digest of the 18th International Vacuum Nanoelectronics Conference
Conference18th International Vacuum Nanoelectronics Conference, 2005
Pages182183; # of pages: 2
AbstractThin films of lanthanum monosulfide (LaS) have been successfully deposited on Si and InP substrates by pulsed laser deposition. The values of deposition parameters (chamber pressure, substrate temperature, substrate-to-target separation, laser energy, repetition rate and spot size on the target) leading to a successful growth of cubic rocksalt structure films are identified. For the films grown on Si substrates, the root-mean-square (RMS) variation of surface roughness is found to be 1.74 nm by atomic force microscopy. XRD scans suggest the presence of amorphous regions in the film. This is confirmed by cross-section transmission electron microscopy analysis. For films grown on InP substrates, a thin crystalline film about 500 nm thick followed by an abrupt transition to an amorphous layer about 120 nm thick is observed. The work function of the LaS thin films deposited on Si substrates deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV, when measured using the scanning field emission microscope technique (SAFEM) at very different locations across the sample. A strong dependence of the field emission current with temperature is also observed. At very large external electric field, the field emission increases dramatically and is no longer of the Fowler-Nordheim type.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
IdentifierIEEE Cat 05TH8837
NPARC number12346523
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Record identifier056882cb-183e-4e23-8cda-0f6befcead77
Record created2009-09-17
Record modified2016-05-09
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