Transport in carbon nanotube p-i-n diodes

Download
  1. Get@NRC: Transport in carbon nanotube p-i-n diodes (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.2360895
AuthorSearch for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume89
Issue16
Pages163121-1163121-3; # of pages: 3
Subjectavalanche breakdown; carbon nanotubes; electrical conductivity; energy gap; nanotube devices; p-i-n diodes; tunnelling; Zener effect
AbstractSingle-walled carbon nanotube diodes are fabricated in a split-gate geometry with electron (n) and hole (p) regions separated by a central region. With the central region gated p or n type the diodes "leak" at low voltages, likely due to tunneling across the smaller depletion region. With the central region intrinsic, nearly ideal diode behavior is observed. Comparison to theory for a one-dimensional diode yields the band gap of the tube and the transmission coefficient through the junction. In reverse bias, the breakdown voltage depends weakly on temperature and nanotube diameter. Comparisons are made to predictions for Zener tunneling and avalanche breakdown.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; National Institute for Nanotechnology
Peer reviewedNo
NPARC number12328504
Export citationExport as RIS
Report a correctionReport a correction
Record identifier058d2c42-1e8a-40c1-aece-35f5d6d4982d
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)