Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation

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Proceedings titleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
ConferenceNinth International Conference on Ion Beam Modification of Materials (IBMM'95), February 5-10, 1995, Canberra, Australia
Pages457460; # of pages: 4
AbstractIon implantation induced Quantum Well (QW) intermixing using high energies (2 to 8 MeV As⁺ and P⁺) has been shown to be an effective technique for achieving spatially selective tuning of QW laser structures (InGaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the InGaAs/GaAs QW laser structure, using photoluminescence as a diagnostic tool to help optimise these parameters. This work is then extended to the InGaAs/InP QW laser structure where significant differences are observed, in particular concerning the ion implantation depth relative to the depth of the QWs.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329126
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Record identifier05cb872e-e873-410c-ac01-79d025c4a6cf
Record created2009-09-10
Record modified2016-05-09
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