Oxidation of III-V semiconductors

DOIResolve DOI: http://doi.org/10.1016/j.corsci.2006.05.004
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TypeArticle
Proceedings titleCorrosion Science
ConferenceProgress in Corrosion Research in Commemoration of Centenary of Birth of Professor Go Okamoto, International Symposium on “Progress in Corrosion Research”, 14–16 September 2005, Sapporo, Japan
Volume49
Issue1
Pages3141; # of pages: 11
SubjectElectronic materials; AES, XPS, TEM; Oxidation Wlms
AbstractThis paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, 16O/18O secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal–insulator–semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744914
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Record identifier06d0faf7-8c8f-4319-bb16-476ae805279b
Record created2009-10-27
Record modified2016-05-09
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