Oxidation of III-V semiconductors

DOIResolve DOI: http://doi.org/10.1016/j.corsci.2006.05.004
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Proceedings titleCorrosion Science
ConferenceProgress in Corrosion Research in Commemoration of Centenary of Birth of Professor Go Okamoto, International Symposium on “Progress in Corrosion Research”, 14–16 September 2005, Sapporo, Japan
Pages3141; # of pages: 11
SubjectElectronic materials; AES, XPS, TEM; Oxidation Wlms
AbstractThis paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, 16O/18O secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal–insulator–semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744914
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Record identifier06d0faf7-8c8f-4319-bb16-476ae805279b
Record created2009-10-27
Record modified2016-05-09
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