Structure damage in reactive-ion and laser etched InP/GalnAs microstructures

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DOIResolve DOI: http://doi.org/10.1063/1.360763
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TypeArticle
Journal titleJournal Of Applied Physics
Volume78
Issue3
Pages14881491; # of pages: 4
SubjectAES; ATOMIC FORCE MICROSCOPY; DAMAGE; ETCHING; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION BEAMS; LASER RADIATION; MULTILAYERS; RAMAN SPECTRA
AbstractEtching of a chemical-beam-epitaxy-grown InP/InGaAs multilayer structure with reactive ion etching (RIE) and laser-assisted dry etching ablation (LADEA) is carried out in order to evaluate the extent of the damage induced by these two etching methods. Micro-Raman spectroscopy indicates a systematic broadening of the phonon lines as a function of depth of a RIE fabricated crater. In contrast, LADEA which is based on the application of an excimer laser for the removal of the products of chemical reaction, shows no measurable changes in the phonon line widths when compared to as-grown material. The results suggest that LADEA has potential for the photoresistless fabrication of damage free microstructures.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327308
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Record identifier06e83d00-7373-4328-99aa-d2728b62725f
Record created2009-09-10
Record modified2017-03-23
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