The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation

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DOIResolve DOI: http://doi.org/10.1109/68.531817
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TypeArticle
Journal titleIEEE Photonics Technology Letters
ISSN10411135
Volume8
Issue9
Pages11451147; # of pages: 3
Subject/spl mu/m laser structure bandgap; 1.5 mum; absorbing section; broad spectrum light emitting diode; broad-spectrum light-emitting diode; emission full width half maximum; Fabry-Perot noise; high-energy ion implantation; ion implantation; lasing operation suppression; LED; optical fabrication; semiconductor quantum wells; semiconductor technology; superluminescent diode fabrication; superluminescent diodes
AbstractHigh-energy ion implantation is used to spatially modify the bandgap of a 1.5-/spl mu/m laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10456375
NPARC number12327990
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Record identifier070b3931-5416-4a48-b4fd-732f0abe191e
Record created2009-09-10
Record modified2016-05-09
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