Smooth Wet Etching by UV-Assisted Photoetching and Its Application to the Fabrication of AlGaN/GaN Heterostructure Field-Effect Transistors

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DOIResolve DOI: http://doi.org/10.1063/1.1330226
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TypeArticle
Journal titleApplied Physics Letters
Volume77
Issue23
Pages3833
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12327979
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Record identifier075f0db7-e973-45d6-9b5a-5b87b171ba41
Record created2009-09-10
Record modified2016-05-09
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