Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

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DOIResolve DOI: http://doi.org/10.1016/S0038-1101(02)00112-0
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TypeArticle
Journal titleSolid State Electronics
Volume46
Issue10
Pages16031608; # of pages: 6
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744019
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Record identifier07fa4a8e-7dcb-4e81-99c6-c018673591d2
Record created2009-10-27
Record modified2016-05-09
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