Inelastic light scattering from electronic excitations in deep-etched quantum dots and wires

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DOIResolve DOI: http://doi.org/10.1016/0038-1101(95)00324-X
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TypeArticle
Journal titleSolid-State Electronics
Volume40
Issue1-8
Pages339342; # of pages: 4
AbstractResonant Raman spectroscopy of modulation-doped GaAs/AlGaAs multiple quantum well dots and wires is reported. Deep etching with a SiCl4 reactive ion etching process achieved an excellent aspect ratio (>10:1) and low surface damage for dots and wires of sizes in the range 60-250 nm. A rich spectrum of single particle excitations was observed at Raman shifts in the range 1-35 meV for both dots and wires. Sharp resonances were found for the Raman intensities. The electronic scattering in wires exhibits distinct polarization properties in agreement with theoretical predictions and the spin density excitation energies are in reasonable agreement with Hartree approximation calculations. The dispersion of the intrasubband plasmon collective mode in 60 nm wires has been determined. The excitations in dots show a systematic shift to higher energy with decreasing dot diameter consistent with increased confinement. Magneto-Raman scattering from dot samples was also investigated at magnetic fields up to 12 T and the excitation spectra show level splitting, level crossing and mode softening with increasing magnetic field.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328006
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Record identifier08f992df-bd1f-4acf-8dd4-cb864991cd22
Record created2009-09-10
Record modified2016-05-09
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