Low RF noise and power loss for ion-implanted Si having an improved implantation process

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DOIResolve DOI: http://doi.org/10.1109/LED.2002.807027
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume24
Issue1
Pages2830; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744651
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Record identifier095580ae-90a8-45b1-aafb-1c81697acee6
Record created2009-10-27
Record modified2016-05-09
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