Passivation of GaAs(111)A surface by Cl termination

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DOIResolve DOI: http://doi.org/10.1063/1.115198
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TypeArticle
Journal titleApplied Physics Letters
Volume67
Issue5
Pages670672; # of pages: 3
SubjectCHEMICAL BONDS; CHLORINATION; ENERGY GAP; ETCHING; GALLIUM ARSENIDES; PASSIVATION; PHOTOEMISSION; SURFACE STATES; SURFACE TREATMENTS; XANES
AbstractIt is found that an ordered and air-stable GaAs(111)A舑(1 × 1)舑Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization-dependent Cl K-edge x-ray absorption near-edge structure and x-ray photoelectron spectroscopy studies showed that the surface is terminated with Ga舑Cl bonds oriented along the surface normal. Low-energy electron diffraction studies showed a bulklike (1 × 1) structure on the Cl-terminated GaAs(111)A surface. The Cl termination eliminates surface band-gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near-band radiative emission rate corresponding to reduction in the occupied surface band-gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328630
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Record identifier09577a29-9167-4785-9c80-541886b4a816
Record created2009-09-10
Record modified2016-05-09
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