Strain-induced lateral self-organization in Si/SiO2 nanostructures

Download
  1. Get@NRC: Strain-induced lateral self-organization in Si/SiO2 nanostructures (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.3290250
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume96
Issue1
Pages013105-1013105-3; # of pages: 3
AbstractWe show that strain, arising from the mismatch between Si and SiO₂ thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/SiO₂ interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number16378396
Export citationExport as RIS
Report a correctionReport a correction
Record identifier09e70b01-39f1-4b5f-9e4a-608b40d3ad59
Record created2010-11-15
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)