Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.89.035315
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TypeArticle
Journal titlePhysical Review B - Condensed Matter and Materials Physics
ISSN1098-0121
Volume89
Issue3
Article number35315
AbstractWe devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface - effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system. © 2014 American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21272219
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Record identifier09ea74c3-5efd-4f30-be97-996278b4d3ec
Record created2014-07-23
Record modified2016-05-09
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