Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

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DOIResolve DOI: http://doi.org/10.1109/TED.2003.812502
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TypeArticle
Journal titleIEEE Transactions on Electronic Devices
Volume50
Issue4
Pages11411144; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744782
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Record identifier0a2eee07-2099-45b3-bf47-8dc01c37729a
Record created2009-10-27
Record modified2016-05-09
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