Few-electron quantum dots in InGaAs quantum wells: Role of fluctuations

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DOIResolve DOI: http://doi.org/10.1063/1.3574540
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TypeArticle
Journal titleApplied Physics Letters
Volume98
Issue13
Pages132107-1132107-3; # of pages: 3
AbstractWe study the electron transport properties of gated quantum dots formed in InGaAs/InP quantum well structures grown by chemical-beam epitaxy on prepatterned substrates. Quantum dots form directly underneath narrow gates due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade in the quantum Hall regime are also observed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number17696151
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Record identifier0a72b3b1-1ee6-40bb-8853-06ecc881412a
Record created2011-04-05
Record modified2016-05-09
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