Tunable InAs quantum-dot lasers grown on (100) InP

DOIResolve DOI: http://doi.org/10.1016/S0026-2692(03)00037-5
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Proceedings titleMicroelectronics Journal
Conference4th International Conference on Low-Dimensional Structures and Devices, 8-13 December 2002, Fortaleza, Ceara, Brazil
Pages415417; # of pages: 3
AbstractFive stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP were grown on (100) InP substrate to form a laser diode. Two methods were used to achieve tuning: changing the laser cavity length or varying the temperature. Stimulated emission between ∼1.51 and ∼1.64 μm was observed depending on the cavity length and the QD barrier height. The threshold current density was decreased for longer cavities to a value as low as 49 A/cm2 at 77 K. The relation between temperature and lasing peak wavelength was measured to be ∼0.21 nm/K leading to room temperature lasing at ∼1.61 μm.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744511
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Record identifier0ac4e585-065f-4cb5-a780-df9d0faf40b9
Record created2009-10-27
Record modified2016-05-09
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