p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

Download
  1. Get@NRC: p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.117963
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume69
Issue21
Pages32093211; # of pages: 3
SubjectPhotodetectors; Gallium Arsenides; Indium Arsenides; Indium Phosphides; Quantum Wells; Infrared Radiation; Molecular Beam Epitaxy; Photoconductivity; Photodetectors (including infrared and CCD detectors); Imaging detectors and sensors; III-V semiconductors
AbstractLattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12337971
Export citationExport as RIS
Report a correctionReport a correction
Record identifier0c00e236-045a-4efd-9f92-f743959cdff9
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)