Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

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DOIResolve DOI: http://doi.org/10.1016/S0022-0248(98)01447-X
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TypeArticle
Journal titleJournal of Crystal Growth
Volume201-202
Pages679683; # of pages: 5
Subjectmolecular beam epitaxy; low-temperature growth; III–V semiconductor; diluted magnetic semiconductor;Transient reflectivity; (Ga,Mn)As
AbstractGaAs and (Ga,Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338201
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Record identifier0c476993-fdc8-4a9a-a484-80d2ccbe3dc9
Record created2009-09-10
Record modified2016-05-09
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