Effects of small specimen tilt and probe convergence angle on ADF-STEM image contrast of Si0.8Ge0.2 epitaxial strained layers on (100) Si

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DOIResolve DOI: http://doi.org/10.1016/j.ultramic.2012.01.001
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TypeArticle
Journal titleUltramicroscopy
Volume114
Pages4655; # of pages: 10
Subjectannular dark field scanning transmission electron microscopy; semiconductor heteroepitaxial strained layers
AbstractThe effects of specimen tilt and probe convergence angle on annular darkfield(ADF) image contrast of Si0.8Ge0.2 heteroepitaxial strained layers on(100) Si were investigated in a 200kV scanning transmission electron microscope (STEM) for a TEM specimen thickness of 195nm. With 0.5 degrees of specimen tilt away from the exact <011S> zone-axis orientation, the signal-to-noise level of atomic columns was significantly reduced for both Si0.8Ge0.2 and Si in high resolution ADF-STEM lattice images. When the specimen was tilted 0.5 degrees around the <011S> axis, or the STEM probe convergence semi angle was reduced from 14.3 to 3.6 mrad, the ADF-STEM image intensity profiles across the Si0.8Ge0.2 and Si layers changed significantly as compared to those obtained at the exact <011S> zone axis orientation, and no longer reflected the composition changes occurring across the layer structure. Multislice image simulation results revealed that the misfit strain between the Si0.8Ge0.2 and Silayers, and strain relaxation near the surface of the TEM specimen, were responsible for the observed changes in image intensity.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number19577561
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Record identifier0cbddbc6-7119-46da-9f06-6f2a80a99a49
Record created2012-02-29
Record modified2016-05-09
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