Magnetotransport properties of p-type strained SiGe quantum wells

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
Proceedings title1996 Conference on Optoelectronic and Microelectronic Materials and Devices: Proceedings
ConferenceConference On Optoelectronic And Microelectronic Materials And Devices, December 8-11, 1996, Canberra, Australia
AbstractA brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si.₈₈Ge.₁₂ quantum wells is described and the results of characterisation using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures.
Publication date
PublisherInstitute of Electrical and Electronics Engineers
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328055
Export citationExport as RIS
Report a correctionReport a correction
Record identifier0d6ece8c-908a-48b8-8da1-a2f8cd7e83ca
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: