High-Speed AlGaN/GaN HFETs Fabricated by Wet Etching Mesa Isolation

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DOIResolve DOI: http://doi.org/10.1049/el:20001351
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TypeArticle
Journal titleElectronics Letters
Volume36
Issue23
Pages19691971; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328413
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Record identifier0d8aa33a-ac50-48cb-b165-fd57f9c225d6
Record created2009-09-10
Record modified2016-05-09
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