Interband cascade light emitting diodes in the 5–8 μm spectrum region

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DOIResolve DOI: http://doi.org/10.1063/1.118806
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TypeArticle
Journal titleApplied Physics Letters
Volume70
Issue15
Pages20132015; # of pages: 3
Subjectindium compounds; gallium compounds; aluminium compounds; III-V semiconductors; light emitting diodes; electroluminescence; Stark effect; Light-emitting devices; Electroluminescence
AbstractInterband cascade electroluminescence in the 5–8 μm spectrum region is observed from a staircase of Sb-based type-II quantum well structures. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 15 periods of active regions separated by digitally graded multilayer injection regions. The device has been operated at 300 and 77 K with an output optical power up to 700 nW. The strong blue shift of the electroluminescent peak with the applied bias due to the Stark effect has also been observed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338368
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Record identifier0d985510-54b0-42a2-bc06-b5e61cd113c2
Record created2009-09-10
Record modified2016-05-09
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