Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

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Proceedings title2001 International Semiconductor Device Research Symposium : symposium proceedings
Conference2001 International Semiconductor Device Research Symposium, 5-7 December 2001, Washington, DC, USA
Pages3437; # of pages: 4
AbstractWe have studied in detail the hot-carrier induced degradation in polysilicon-emitter NPN bipolar junction transistors (BJTs) with different emitter geometries. Our results confirm that the oxide/silicon interface traps generated by electrical stressing, are located in the same region as those present in unstressed devices - around the emitter perimeter. We also believe that positive charged defects are generated by the hot-carrier stressing, and that these trapped charges may be involved in the stress recovery at short times with lower activation energies. Reversible changes in the reverse bias stress current were observed especially at low reverse bias. This is possibly connected with the creation of interface/midgap states which can be involved in trap-assisted tunneling, both in reverse and forward bias. Hot-carrier induced degradation occurs in our devices mainly in the base-emitter (BE) but also in the base-collector (BC) diodes. This, we think, is related to the presence of field oxide in the BC region that has allowed hot holes to create trapped charge.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346192
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Record identifier0e6e3a0b-f249-44b6-b640-2f7f0d90de17
Record created2009-09-17
Record modified2016-05-09
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