Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals

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DOIResolve DOI: http://doi.org/10.1143/JJAP.46.6586
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TypeArticle
Journal titleJapanese Journal of Applied Physics
Volume46
Pages6586–6588
Subjectsilicon nanocrystal; floating gate; MOSFET; nonvolatile memory; hemispherically shaped silicon
AbstractSilicon nanocrystal-embedded memories were fabricated by using the thermal agglomeration of an ultrathin (1.5 –1.8 nm) amorphous silicon (a-Si) film. The a-Si was deposited on a 4-nm tunnel-oxide layer by electron beam evaporation and subsequently annealed in situ at 850 oC for 5 min. Hemispherical Si nanocrystals were self-assembled, and nonvolatile memories were fabricated after depositing a 17-nm control-oxide layer. A threshold voltage window of 0.9V was achieved under write/erase (W/E) voltages of ±10 V, and good endurance characteristics up to 104 cycles were exhibited. Increasing W/E voltages created a large memory window (>2:7 V), and the retention characteristics showed little temperature dependence up to 85 oC.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744756
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Record identifier0e78c051-d28f-495a-8449-c308a87d93c0
Record created2009-10-27
Record modified2016-05-09
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