Intersubband impact ionization in THz QWIPs: Shaping band structure reorganizations to design novel detectors

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DOIResolve DOI: http://doi.org/10.1117/12.870923
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TypeArticle
Proceedings titleSPIE - International Society for Optical Engineering. Proceedings
ConferenceQuantum Sensing and Nanophotonic Devices VIII, 23 January 2011 through 27 January 2011, San Francisco, CA
ISSN0277-786X
ISBN9780819484826
Volume7945
Article number79450W
SubjectAlGaAs/GaAs; Electron distributions; Electronic transport; High gain; Inter-subband; NDR; Orders of magnitude; Quantum well; QWIP; Shorter wavelength; Structure reorganizations; THz; Transition energy; Band structure; Detectors; Infrared detectors; Magnetic field effects; Nanophotonics; Optoelectronic devices; Quantum chemistry; Structural design; Impact ionization
AbstractElectronic transport in AlGaAs/GaAs THz Quantum Wells Intersubband Photodetectors (QWIPs) exhibits two different regimes separated by huge discontinuities (up to five orders of magnitude) in the resistivity. They are interpreted in terms of band structure reorganizations triggered by intersubband impact ionization. We will analyze and model their in uence on the electronic transport. The magnitude of the transport modifications is explained by the small transition energy and the sharpness of the electrons distribution at stake in THz QWIPs. Measurements under magnetic field or temperature show that the broadening of the electron distribution damps the effects of impact ionization. Some experimental features of the electronic transport of shorter wavelength detectors are then reproduced. The use of intersubband impact ionization in THz QWIPs to design high gain and fast novel detectors is discussed. © 2011 SPIE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271141
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Record identifier0ed0bf55-934a-4e79-b857-59f67b2be985
Record created2014-03-24
Record modified2017-04-24
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