Optimized growth of GaN/AlGaN HFETs on sapphire and SiC substrates by ammonia- MBE

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TypeArticle
Proceedings titleThe 8th International Conference on Electronic Materials
ConferenceJuna 10-14, 2002
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12333696
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Record identifier0f18d30d-2f94-4d2a-bb2a-27cf92b05457
Record created2009-09-10
Record modified2016-05-09
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