Atomic layer deposition of TiN for the fabrication of nanomechanical resonators

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DOIResolve DOI: http://doi.org/10.1116/1.4790132
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
ISSN0734-2101
Volume31
Issue2
Article number21503
SubjectCandidate materials; Chemical compositions; Grain size; High resolution; Mechanical resonance; Nano beams; Nanomechanical resonators; Reflectometry; Resonance frequencies; Resonance testing; Stress state; Deposition rates; Electron beam lithography; Fabrication; Films; Interferometry; Photoelectrons; Resonators; Titanium nitride; X ray diffraction; X ray photoelectron spectroscopy; Atomic layer deposition
AbstractFilms of titanium nitride were grown by atomic layer deposition (ALD) over a range of temperatures from 120 °C to 300 °C, and their deposition rates were characterized by ellipsometry and reflectometry. The stress state of the films was evaluated by interferometry using a wafer bowing technique and varied from compressive (-18 MPa) to tensile (650 MPa). The crystal structure of the films was assessed by x-ray diffraction. The grain size varied with temperature in the range of 2-9 nm. The chemical composition of the films was ascertained by high-resolution x-ray photoelectron spectroscopy and showed the presence of O, Cl, and C contaminants. A mildly tensile (250 MPa) stressed film was employed for the fabrication (by electron beam lithography and reactive ion etching) of doubly clamped nanoresonator beams. The resonance frequency of resonators was assayed using an interferometric resonance testing apparatus. The devices exhibited sharp mechanical resonance peaks in the 17-25 MHz range. The uniformity and controllable deposition rate of ALD films make them ideal candidate materials for the fabrication of ultranarrow (<50 nm) nanobeam structures. © 2013 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21271820
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Record identifier0f328e26-d0ca-4a85-8fae-e4f314a540d0
Record created2014-04-22
Record modified2016-05-09
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