Pulsed laser deposition of lanthanum monosulfide thin films on silicon substrates

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DOIResolve DOI: http://doi.org/10.1116/1.1856477
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B
Volume23
Issue1
Pages318321; # of pages: 4
Subjectthin films; thin film growth; pulsed laser deposition; sputter deposition; thin film deposition
AbstractThin films of lanthanum monosulfide (LaS) have been successfully deposited on Si substrates by pulsed laser deposition. The values of deposition parameters (chamber pressure, substrate temperature, substrate-to-target separation, laser energy, repetition rate, and spot size on the target) leading to a successful growth of films in their cubic rocksalt structure are identified. The films are golden yellow in appearance with a mirror-like surface morphology and possess a sheet resistance around 0.1Ω∕square. X-ray diffraction analysis of thick films (several microns) leads to a lattice constant of 5.863(7)Å, which is close to the bulk LaS value. High-resolution transmission electron microscopy reveals the films to be comprised of nanocrystalline regions separated by amorphous ones. The root-mean-square variation of film surface roughness measured over a 1μm×1μm area is found to be 1.74nm by atomic force microscopy. These films have potential for semiconductor, vacuum microelectronics, and optoelectronics applications.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744766
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Record identifier101f4aae-3da7-4dd0-bacd-502247bccdcd
Record created2009-10-27
Record modified2016-05-09
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